High concentration effects of Ge and As in Si

Turan, Raṣit
Bok · Engelsk · [1990]
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An improved technique for quasi-static C-V measurements

Turan, Raṣit
Inngår i serie: Rapport / Universitetet i Oslo, Fysisk institutt (90-24)
Bok · Engelsk · 1990 · Les på nett
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Nonequilibrium diffusion of dopants in silicon : numerical solutions of the diffusion equation, application to redistribution of ion implanted dopants in <111> recrystallized silicon

Turan, Raṣit
Inngår i serie: Report series / Department of Physics, University of Oslo (90-23)
Bok · Engelsk · 1990 · Les på nett
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